G. Gasiot: search on Z-Library

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1

A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film

Manifacier, J C, Gasiot, J, Fillard, J P

Journal:

Journal of Physics E Scientific Instruments

Year:

1976

Language:

english

File:

PDF, 279 KB

english, 1976

2

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

Autran, J.L., Glorieux, M., Munteanu, D., Clerc, S., Gasiot, G., Roche, P.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 1.16 MB

english, 2014

3

Cell design modifications to harden an N-channel power IGBT against single event latchup

Lorfevre, E., Sagnes, B., Bruguier, G., Palau, J.M., Gasiot, J., Calvet, M.C., Ecoffet, R.

Journal:

IEEE Transactions on Nuclear Science

Year:

1999

Language:

english

File:

PDF, 310 KB

english, 1999

4

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis

Malherbe, Victor, Gasiot, Gilles, Soussan, Dimitri, Patris, Aurelien, Autran, Jean-Luc, Roche, Philippe

Year:

2015

Language:

english

File:

PDF, 762 KB

english, 2015

5

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

J.L. Autran, D. Munteanu, P. Roche, G. Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, E. Yakushev, S. Rozov, P. Loaiza, G. Warot, M. Zampaolo

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 1.93 MB

english, 2010

6

Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements

F. Saigné, O. Quittard, L. Dusseau, F. Joffre, C. Oudéa, J. Fesquet, J. Gasiot

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 192 KB

english, 2002

7

Impacts of front-end and middle-end process modifications on terrestrial soft error rate

Roche, P., Gasiot, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2005

Language:

english

File:

PDF, 987 KB

english, 2005

8

A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

Heijmen, Tino, Roche, Philippe, Gasiot, Gilles, Forbes, Keith R., Giot, Damien

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 521 KB

english, 2007

9

Real-time soft-error rate measurements: A review

Autran, J.L., Munteanu, D., Roche, P., Gasiot, G.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 7.38 MB

english, 2014

10

[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Simulation of heavy ion latchup cross section curves

de La Rochette, H., Bruguier, G., Palau, J.-M., Gasiot, J., Ecoffet, R.

Year:

1996

File:

PDF, 530 KB

1996

11

The latchup risk of CMOS-technology in space

Moreau, Y., de la Rochette, H., Bruguier, G., Gasiot, J., Pelanchon, F., Sudre, C., Ecoffet, R.

Journal:

IEEE Transactions on Nuclear Science

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

12

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P., Calvett, M.-C., Calvel, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

1995

Language:

english

File:

PDF, 538 KB

english, 1995

13

The effect of layout modification on latchup triggering in CMOS by experimental and simulation approaches

de La Rochette, H., Bruguier, G., Palau, J.M., Gasiot, J., Ecoffet, R.

Journal:

IEEE Transactions on Nuclear Science

Year:

1994

Language:

english

File:

PDF, 634 KB

english, 1994

14

New approach to thermally stimulated transients: Experimental evidence for ZnSe: Al crystals

Fillard, J. P., Gasiot, J., Manifacier, J. C.

Journal:

Physical Review B

Year:

1978

Language:

english

File:

PDF, 698 KB

english, 1978

15

[IEEE RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3) - St. Malo, France (13-16 Sept. 1993)] RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3) - Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs

Roubaud, F., Dachs, C., Palau, J.-M., Gasiot, J., Tastet, P.

Year:

1994

Language:

english

File:

PDF, 626 KB

english, 1994

16

[IEEE 2014 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with NSREC 2014) - Paris, France (2014.7.14-2014.7.18)] 2014 IEEE Radiation Effects Data Workshop (REDW) - TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology

Malou, Florence, Gasiot, Gilles, Chevallier, Remy, Dugoujon, Laurent, Roche, Philippe

Year:

2014

Language:

english

File:

PDF, 816 KB

english, 2014

17

ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure

Autran, J.L., Munteanu, D., Moindjie, S., Saoud, T. Saad, Sauze, S., Gasiot, G., Roche, P.

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.39 MB

english, 2015

18

Relaxational behavior of CR-39 polycarbonate used as nuclear track detector

J. Vanderschueren, G. Yianakopoulos, J. Niezette, C. Chatry, J. Gasiot

Journal:

Journal of Applied Polymer Science

Year:

1992

Language:

english

File:

PDF, 1.25 MB

english, 1992

19

Simulation of thermally stimulated dipolar processes in dielectrics

A. Linkens, J. Vanderschueren, P. Parot, J. Gasiot

Journal:

Computer Physics Communications

Year:

1978

Language:

english

File:

PDF, 761 KB

english, 1978

20

Les phenomenes de relaxation non isotherme dans les copolymeres ethylene-acetate de vinyle—II. Thermoluminescence

A. Linkens, J. Vanderschueren, Sovan Han Chor, J. Gasiot

Journal:

European Polymer Journal

Year:

1976

File:

PDF, 551 KB

1976

21

Optically stimulated luminescence and cathodoluminescence of MgS:Eu phosphors

R.P. Rao, J. Gasiot, J.P. Fillard

Journal:

Journal of Luminescence

Year:

1984

Language:

english

File:

PDF, 140 KB

english, 1984

22

Thermally stimulated currents in Cu2O

J.P. Fillard, J. Gasiot

Journal:

Journal of Physics and Chemistry of Solids

Year:

1970

Language:

english

File:

PDF, 207 KB

english, 1970

23

Multisample thermoluminescence reading

J. Gasiot, M. Castagne, J.P. Fillard, P. Braunlich, G. Portal

Journal:

Nuclear Instruments and Methods

Year:

1980

Language:

english

File:

PDF, 94 KB

english, 1980

24

Towards a logical analysis of the mathematical basis of thermally stimulated processes

J.P. Fillard, J. Gasiot

Journal:

Journal of Electrostatics

Year:

1977

Language:

english

File:

PDF, 315 KB

english, 1977

25

Data processing involved in the treatment of the ratio R = TSC/TSL

J.P. Fillard, J. Gasiot, M. de Murica

Journal:

Journal of Electrostatics

Year:

1977

Language:

english

File:

PDF, 261 KB

english, 1977

26

Evidence for refilling of recombination centers during thermal stimulation in AgBr

J.P. Fillard, J. Gasiot, J. Jimenez, L.F. Sanz, J.A. De Saja

Journal:

Journal of Electrostatics

Year:

1977

Language:

english

File:

PDF, 250 KB

english, 1977

27

Simulation of thermally stimulated dipolar processes in dielectrics

A. Linkens, J. Vanderschueren, P. Parot, J. Gasiot

Journal:

Computer Physics Communications

Year:

1984

Language:

english

File:

PDF, 48 KB

english, 1984

28

Thermally stimulated emission from traps and related problems in SnO2 monocrystals

J. P. Fillard, J. Gasiot, M. de Murcia

Journal:

physica status solidi (a)

Year:

1970

Language:

english

File:

PDF, 360 KB

english, 1970

29

Stimulated light emission in SnO2 high resistivity monocrystals

J. P. Fillard, J. Gasiot, M. De Murcia, Tran Trong Quynh

Journal:

physica status solidi (a)

Year:

1972

Language:

english

File:

PDF, 158 KB

english, 1972

30

Quelques commentaires sur la corrélation entre les pics simultanés TSC et TSL

J. P. Fillard, J. Gasiot

Journal:

physica status solidi (a)

Year:

1975

Language:

french

File:

PDF, 164 KB

french, 1975

31

A surface effect in CaSO4:Mn/PVDF mixtures

R. Zângaro, J. Gasiot

Journal:

physica status solidi (a)

Year:

1988

Language:

english

File:

PDF, 203 KB

english, 1988

32

UV emissions in the thermostimulated luminescence of CaSO4: Dy3+. Influence of the host CaSO4 lattice, Dy3+ concentration, and Tm3+ codoping

D. Lapraz, D. Goyet, V. Gerome, P. Iacconi, H. Prevost, J. Gasiot, A. Baumer

Journal:

physica status solidi (a)

Year:

1996

Language:

english

File:

PDF, 413 KB

english, 1996

33

Les phenomenes de relaxation non isotherme dans les copolymeres ethylene-acetate de vinyle—I. Courants de depolarisation thermique

A. Linkens, J. Vanderschueren, Sovan Han Chor, J. Gasiot

Journal:

European Polymer Journal

Year:

1976

File:

PDF, 425 KB

1976

34

Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method

H. Dongmo, J.F. Carlotti, G. Bruguier, C. Guasch, J. Bonnet, J. Gasiot

Journal:

Applied Surface Science

Year:

2003

Language:

english

File:

PDF, 373 KB

english, 2003

35

Proton dosimetry measurements and calculations in electronic packages using optically stimulated luminescent films

Ranchoux, G., Plattard, D., Polge, G., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., Iborra-Brassart, N.

Journal:

IEEE Transactions on Nuclear Science

Year:

2001

Language:

english

File:

PDF, 157 KB

english, 2001

36

Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

Merelle, T., Chabane, H., Palau, J.-M., Castellani-Coulie, K., Wrobel, F., Saigne, F., Sagnes, B., Boch, J., Vaille, J.R., Gasiot, G., Roche, P., Palau, M.-C., Carriere, T.

Journal:

IEEE Transactions on Nuclear Science

Year:

2005

Language:

english

File:

PDF, 392 KB

english, 2005

37

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

Roubaud, F., Dachs, C., Palau, J.-M., Gasiot, J., Tastet, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

1993

Language:

english

File:

PDF, 693 KB

english, 1993

38

Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

Roche, Philippe, Gasiot, Gilles, Harboe-Sorensen, Reno, Giot, Damien

Journal:

IEEE Transactions on Nuclear Science

Year:

2007

Language:

english

File:

PDF, 926 KB

english, 2007

39

Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

A.D. Touboul, J.F. Carlotti, M. Marinoni, M. Caussanel, M. Ramonda, C. Guasch, G. Bruguier, J. Bonnet, F. Saigné, J. Gasiot

Journal:

Journal of Non-Crystalline Solids

Year:

2005

Language:

english

File:

PDF, 224 KB

english, 2005

40

Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., David, J.P., Schrimpf, R.D., Galloway, K.F.

Journal:

IEEE Transactions on Nuclear Science

Year:

1997

Language:

english

File:

PDF, 740 KB

english, 1997

41

[IEEE RADECS 2001. 2001 6th European Conference on Radiation and its Effects on Components and Systems - Grenoble, France (10-14 Sept. 2001)] RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) - Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

Ferlet-Cavrois, V., Marcandella, C., Giraud, G., Gasiot, G., Colladant, T., Musseau, O., Fenouillet, C., du Port de Poncharra, J.

Year:

2002

Language:

english

File:

PDF, 378 KB

english, 2002

42

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment

Gasiot, Gilles, Roche, Philippe, Flatresse, Philippe

Year:

2008

Language:

english

File:

PDF, 110 KB

english, 2008

43

Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Autran, Jean-Luc, Ferlet-Cavrois, Veronique

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 840 KB

english, 2010

44

Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

Merelle, T., Saigne, F., Sagnes, B., Gasiot, G., Roche, Ph., Carriere, T., Palau, M.-C., Wrobel, F., Pal, J.-M.

Journal:

IEEE Transactions on Nuclear Science

Year:

2005

Language:

english

File:

PDF, 814 KB

english, 2005

45

Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering

Gasiot, G., Giot, D., Roche, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

2007

Language:

english

File:

PDF, 1.33 MB

english, 2007

46

Process Variability Effect on Soft Error Rate by Characterization of Large Number of Samples

Gasiot, G., Castelnovo, A., Glorieux, M., Abouzeid, F., Clerc, S., Roche, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 696 KB

english, 2012

47

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Roche, P., Palau, J.M., Bruguier, G., Tavernier, C., Ecoffet, R., Gasiot, J.

Journal:

IEEE Transactions on Nuclear Science

Year:

1999

Language:

english

File:

PDF, 785 KB

english, 1999

48

Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

Correas, V., Saigne, F., Sagnes, B., Wrobel, F., Boch, J., Gasiot, G., Roche, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

2009

Language:

english

File:

PDF, 1.30 MB

english, 2009

49

Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Autran, Jean-Luc, Dugoujon, Laurent

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 573 KB

english, 2011

50

Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Tavernier, Clement, Autran, Jean-Luc

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 857 KB

english, 2010